Switching Characteristics of a 1.2kV SiC MOSFET Module using a Controllable Current-Sourced Gate Driver

authored by

Julius Wiesemann, Christian Sommer, Axel Mertens

Abstract

This paper presents the characterization of a 1.2 kV SiC MOSFET half-bridge module in conjunction with a novel gate driver that allows to change the turn-on speed while in operation. First, the design of a test set-up composed of a SiC MOSFET half-bridge module, a DC-link board and a gate driver board is described. Switching waveforms and switching energies at different currents, voltages and switching speeds are presented. The results show advantages over the classical approach where the turn-on speed is fixed by a gate resistor. Finally, possible applications of the novel gate driver are discussed.

Organisation(s)

Institute of Drive Systems and Power Electronics

Type

Conference contribution

Pages

1466-1471

No. of pages

6

Publication date

2019

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Electronic version(s)

https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8767684 (Access: Closed)