Switching Characteristics of a 1.2kV SiC MOSFET Module using a Controllable Current-Sourced Gate Driver

verfasst von

Julius Wiesemann, Christian Sommer, Axel Mertens

Abstract

This paper presents the characterization of a 1.2 kV SiC MOSFET half-bridge module in conjunction with a novel gate driver that allows to change the turn-on speed while in operation. First, the design of a test set-up composed of a SiC MOSFET half-bridge module, a DC-link board and a gate driver board is described. Switching waveforms and switching energies at different currents, voltages and switching speeds are presented. The results show advantages over the classical approach where the turn-on speed is fixed by a gate resistor. Finally, possible applications of the novel gate driver are discussed.

Organisationseinheit(en)

Institut für Antriebssysteme und Leistungselektronik

Typ

Aufsatz in Konferenzband

Seiten

1466-1471

Anzahl der Seiten

6

Publikationsdatum

2019

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektrotechnik und Elektronik

Elektronische Version(en)

https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8767684 (Zugang: Geschlossen)